Datasheet > NCE2321

NCE2321

更新时间： 2024-04-09 18:58:56

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	249K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE2321 数据手册

Pb Free Product

http://www.ncepower.com

NCE2321

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE2321 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

● V_DS= -20V,I_D= -3.9A

R_DS(ON)<70mΩ @ V_GS=-2.5V

Schematic diagram

R_DS(ON)< 50mΩ @ V_GS=-4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Marking and pin assignment

Application

● PA switch

● Load switch

● Power management

SOT-23 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

8 mm

Quantity

3000 units

2321 Ẋ

NCE2321

SOT-23

Ø180mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

±12

V^GS

Drain Current -Continuous

Drain Current -Pulsed ^{(Note 1)}

-3.9

I_D

-12

I_DM

Maximum Power Dissipation

1.4

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Wuxi NCE Power Co., Ltd

Page1

v1.0

12 3 4 5 6 7

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