Pb Free Product
NCE20TD65B
650V, 20A, Trench FS II Fast IGBT
General Description
Using NCE's proprietary trench design and advanced FS (Field Stop) second
generation technology, the 650V Trench FSII IGBT offers superior conduction and
switching performances, and easy parallel operation;
Features
Trench FSII Technology Offering
Very low VCE(sat)
High speed switching
Positive temperature coefficient in VCE(sat)
Very tight parameter distribution
High ruggedness, temperature stable behavior
Schematic diagram
Application
Air Condition
Inverters
Motor drives
Package Marking and Ordering Information
Device
Device Package
Device Marking
NCE20TD65B
TO-220
NCE20TD65B
TO-220
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Symbol
VCES
Parameter
Value
Units
V
Collector-Emitter Voltage
650
±30
VGES
Gate- Emitter Voltage
V
Collector Current
40
A
IC
Collector Current @TC = 100 °C
20
A
ICpuls
-
Pulsed Collector Current,tp limited by Tjmax
turn off safe operating area,VCE=650V,Tj=175°C
Diode Continuous Forward Current @TC = 100 °C
Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
60
A
60
A
IF
20
A
IFM
60
A
163
W
W
°C
°C
PD
Power Dissipation @TC = 100 °C
81.5
-55 to +175
260
TJ,Tstg
TL
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Short circuit withstand time VGE=15V, VCC≤400V,
Allowed number of short circuits<1000Time between
short circuits:≥1.0s,Tj≤150°C
tsc
5
us
Wuxi NCE Power Co., Ltd
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