Datasheet > NCE2006NE*

NCE2006NE*

更新时间： 2024-03-03 10:09:25

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	757K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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NCE2006NE* 数据手册

NCE2006NE

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE2006NE uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications .It is ESD protested.

Schematic diagram

General Features

● V_DS= 20V,I_D=7A

R_DS(ON)< 27mΩ @ V_GS=2.5V

R_DS(ON)< 21mΩ @ V_GS=4.5V

ESD Rating: 2000V HBM

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Marking and pin assignment

Application

●PWM application

●Load switch

SOT23-6L top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

2006NE

NCE2006NE

SOT23-6L

Ø180mm

8mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

±12

Gate-Source Voltage^(Note5)

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

VGS

I_D

I_DM

Maximum Power Dissipation

1.25

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

100

℃/W

Wuxi NCE Power Co., Ltd

Page1

V4.0

12 3 4 5 6 7

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