Datasheet > NCE18ND11U*

NCE18ND11U*

更新时间： 2024-04-09 18:59:34

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	295K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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NCE18ND11U* 数据手册

NCE18ND11U

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE18ND11U uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=18V,I_D=11A

R_DS(ON)< 7.1mΩ @ V_GS=4.5V

R_DS(ON)< 7.3mΩ @ V_GS=4V

R_DS(ON)< 7.4mΩ @ V_GS=3.8V

R_DS(ON)< 9.0mΩ @ V_GS=3.1V

R_DS(ON)< 10mΩ @ V_GS=2.5V

Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● 2.5V Drive

● Common-drain type

Application

● Battery protection switch

● Mobile device battery charging and discharging

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

18ND11U

NCE18ND11U

DFN2x3 -6L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Pulsed Drain Current

±12

V^DS

V^GS

I_D

I_DM

Maximum Power Dissipation

1.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v1.0

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