Datasheet > NCE16P07J

NCE16P07J

更新时间： 2024-04-09 19:00:48

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	738K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE16P07J 数据手册

http://www.ncepower.com

NCE16P07J

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE16P07J uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages .This device is suitable for use as a load switching

application and a wide variety of other applications.

General Features

● V_DS= -16V,I_D= -7A

Schematic diagram

R_DS(ON)= 26mΩ @ V_GS=-4.5V (Typ)

R_DS(ON)= 34mΩ @ V_GS=-2.5V (Typ)

● Advanced trench MOSFET process technology

● Ultra low on-resistance with low gate charge

Pin assignment

Application

● PWM applications

● Load switch

● Battery charge in cellular handset

DFN2X2-6L bottom view

Package marking and ordering information

Device Marking

Device

Device Package

Reel Size

Tape Width

Quantity

NCE16P07J

DFN2X2-6L

Absolute maximum ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-16

Unit

Drain-Source Voltage

Gate-Source Voltage

±12

VGS

Drain Current-Continuous

Drain Current -Pulsed ^{(Note 1)}

-7

I_D

-28

I_DM

Maximum Power Dissipation

2.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Wuxi NCE Power Co., Ltd

Page1

v1.0

12 3 4 5 6 7

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