http://www.ncepower.com
NCE1608N
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1608N uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
Schematic diagram
General Features
● VDS = 16V,ID =8A
RDS(ON) < 16mΩ @ VGS=2.5V
RDS(ON) < 12mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● Battery protection
● Load switch
● Power management
SOT23-6L top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
3000 units
1608N
NCE1608N
SOT23-6L
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
Unit
Drain-Source Voltage
16
V
V
VDS
VGS
ID
Gate-Source Voltage
±12
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
8
30
A
A
IDM
Maximum Power Dissipation
1.5
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83.3
℃/W
Wuxi NCE Power Co., Ltd
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