Datasheet > NCE15P30

NCE15P30

更新时间： 2024-04-09 18:58:52

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	770K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE15P30 数据手册

http://www.ncepower.com

NCE15P30

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE15P30 uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. It can be used

in a wide variety of applications.

General Features

● V_DS=-150V,I_D=-30A

Schematic diagram

R_DS(ON)<88mΩ @ V_GS=-10V (Typ:78mΩ)

R_DS(ON)<95mΩ @ V_GS=-4.5V (Typ:81.5mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density cell design for ultra low On-Resistance

Marking and pin assignment

Application

● Portable equipment and battery powered systems

100% UIS TESTED!

100% ΔVds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE15P30

TO-220-3L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-150

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VGS

-30

-21.2

-120

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

Maximum Power Dissipation

180

P_D

Single pulse avalanche energy ^{(Note 5)}

Derating factor

E_AS

338

W/℃

℃

1.2

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case ^{(Note 2)}

R_θJC

0.83

℃/W

Wuxi NCE Power Co., Ltd

Page 1

V1.0

12 3 4 5 6 7

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