http://www.ncepower.com
NCE15P25JI
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE15P25JI uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in a wide variety of applications.
General Features
● VDS =-150V,ID =-25A
Schematic diagram
RDS(ON) <135mΩ @ VGS=-10V (Typ.=120mR)
RDS(ON) <160mΩ @ VGS=-4.5V (Typ.=131mR)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
Application
● Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE15P25JI
NCE15P25JI
TO-251
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-150
±20
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VGS
-25
-17
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
-140
A
Maximum Power Dissipation
Derating factor
160
W
W/℃
℃
PD
1.3
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Wuxi NCE Power Co., Ltd
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