Datasheet > NCE1520KA

NCE1520KA

更新时间： 2024-04-09 19:00:16

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	406K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE1520KA 数据手册

Pb Free Product

http://www.ncepower.com

NCE1520KA

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE1520KA uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS= 150V,I_D=20A

Schematic diagram

R_DS(ON)<75mΩ @ V_GS=10V (Typ:62mΩ)

R_DS(ON)<80mΩ @ V_GS=4.5V (Typ:68mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Application

Marking and pin assignment

● Boost converters

● LED backlighting

● Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252 -2Ltop view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE1520KA

TO-252-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Symbol

Parameter

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VDS

±20

VGS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(TC=100℃)

Pulsed Drain Current

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.6

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page1

v1.0

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