Pb Free Product
http://www.ncepower.com
NCE1490
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1490 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =140V,ID =90A
RDS(ON) < 13mΩ @ VGS=10V (Typ:10.5mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
Marking and pin assignment
● Uninterruptible power supply
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE1490
NCE1490
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
140
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
90
63
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
260
310
2.07
1701
A
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
W
PD
W/℃
mJ
EAS
Wuxi NCE Power Semiconductor Co., Ltd
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