Datasheet > NCE1230SP

NCE1230SP

更新时间： 2024-03-03 10:09:56

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	722K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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http://www.ncepower.com

NCE1230SP

NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Description

The NCE1230SP uses advanced trench technology to provide

General Features

● V_SSS=12V,I_S=30A

excellent R_SS(ON), low gate charge and operation with gate

R_SS(on₎=1.0mΩ (typical) @ V_GS=4.5V

voltages as low as 2.5V while retaining a 8V V_GS(MAX)rating. It is

ESD protected. This device is suitable for use as a unidirectional

or bi-directional load switch, facilitated by its common-drain

configuration.

_SS(on₎=1.4mΩ (typical) @ V_GS=2.5V

● 2.5V drive

● Common-drain type

● 2KV HBM

Application

Package Information

● Minimum Packing Quantity : 3,000 pcs./reel

● Lithium-ion battery charging and discharging switch

CSP3.0X2.74

Schematic Diagram

Bottow View

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Symbol

VSSS

Parameter

Limit

Unit

Source to Source Voltage

Gate-Source Voltage

Source Current(DC)

±8

VGSS

200

I_S

I_SP

Source Current (Pulse)

Total Dissipation ^{(Note 1)}

Channel Temperature

Storage Temperature

4.0

℃

P_T

Tch

T_STG

150

-55 To 150

Electrical Characteristics (T_A=25℃unless otherwise noted)

Symbol

Parameter

Condition

Min Typ

Max

Unit

Static Parameters

BV_SSS

I_SSS

Source to Source Breakdown Voltage

Zero- Gate Voltage Source Current

Gate to Source Leakage Current

I_S=1mA, V_GS=0V, Test Circuit 1

V_SS=12V V_GS=0V, Test Circuit 1

V_SS=0V, V_GS= ±8V, Test Circuit 2

μA

I_GSS

±10

Wuxi NCE Power Co., Ltd

Page 1

V1.0

12 3 4 5 6 7

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