Datasheet > NCE1216

NCE1216

更新时间： 2024-03-03 10:09:49

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
6页	574K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE1216 数据手册

http://www.ncepower.com

NCE1216

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE1216 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages .This device is suitable for use as a load switching

application and a wide variety of other applications.

General Features

● V_DS= -12V,I_D= -16A

Schematic diagram

R_DS(ON)< 22mΩ @ V_GS=-2.5V

R_DS(ON)< 18mΩ @ V_GS=-4.5V

● Advanced trench MOSFET process technology

● Ultra low on-resistance with low gate charge

Pin assignment

Application

● PWM applications

● Load switch

● Battery charge in cellular handset

DFN2X2-6L bottom view

Package marking and ordering information

Device Marking

Device

Device Package

Reel Size

Tape Width

Quantity

1216

NCE1216

DFN2X2-6L

Absolute maximum ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-12

Unit

Drain-Source Voltage

Gate-Source Voltage

±12

VGS

Drain Current-Continuous

Drain Current -Pulsed ^{(Note 1)}

-16

I_D

-65

I_DM

Maximum Power Dissipation (T_C=25℃)

℃

P_D(T_C=25℃)

P_D(T_A=25℃)

T_J,T_STG

Maximum Power Dissipation (T_A=25℃)

2.5

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Case ^{(Note 2)}

R_θJC

R_θJA

6.9

℃/W

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

Wuxi NCE Power Co., Ltd

Page1

v2.1

12 3 4 5 6

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