NCE11N65,NCE11N65F
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS
650
380
11
V
mΩ
A
RDS(ON)
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE11N65
NCE11N65F
TO-220
NCE11N65
TO-220F
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
NCE11N65 NCE11N65F
Unit
V
650
Drain-Source Voltage (VGS=0V)
±30
V
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
11
7
11*
7*
A
ID (DC)
Continuous Drain Current at Tc=100°C
A
ID (DC)
(Note 1)
33
33*
A
IDM (pluse)
Pulsed drain current
Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj =
50
dv/dt
PD
V/ns
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
125
1
33
W
W/°C
mJ
A
0.26
340
11
EAS
IAR
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0