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NCE035N30K PDF预览

NCE035N30K

更新时间: 2024-11-24 18:09:35
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 754K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE035N30K 数据手册

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NCE035N30K  
http://www.ncepower.com  
NCE N-Channel Enhancement Mode Power MOSFET  
Description  
The NCE035N30K uses advanced trench technology and  
General Features  
design to provide excellent RDS(ON) with low gate charge. It can VDS =30V,ID =105A  
be used in a wide variety of applications.  
RDS(ON)=3.0 mΩ (typical) @ VGS=10V  
RDS(ON)=5.2 mΩ (typical) @ VGS=4.5V  
High density cell design for ultra low Rdson  
Application  
DC/DC Converter  
Ideal for high-frequency switching and synchronous Very low on-resistance RDS(on)  
rectification  
Good stability and uniformity with high EAS  
175 °C operating temperature  
Pb-free lead plating  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-252-2L  
Schematic Diagram  
Top View  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE035N30K  
NCE035N30K  
TO-252-2L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter Symbol  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
VGS  
±20  
105  
74.2  
420  
115  
A
ID  
ID (100)  
IDM  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current(Note 1)  
A
A
Maximum Power Dissipation  
W
PD  
Derating factor  
0.77  
324  
W/℃  
mJ  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
1.3  
/W  
Wuxi NCE Power Co., Ltd  
Page 1  
V1.0  

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