Datasheet > NCE0224AF

NCE0224AF

更新时间： 2024-04-09 19:01:39

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	314K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE0224AF 数据手册

Pb Free Product

NCE0224AF

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE0224AF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=200V,I_D=24A

R_DS(ON)< 80mΩ @ V_GS=10V (Typ:62mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Schematic diagram

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

TO-220F top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE0224AF

TO-220F

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

200

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

Drain Current-Continuous

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

16.5

100

I_DM

P_D

Maximum Power Dissipation

℃

Single pulse avalanche energy ^{(Note 5)}

E_AS

250

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

3.33

℃/W

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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