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NCE0208KA PDF预览

NCE0208KA

更新时间: 2024-03-03 10:11:04
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
8页 373K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE0208KA 数据手册

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http://www.ncepower.com  
NCE0208KA  
NCE N-Channel Enhancement Mode Power MOSFET  
Description  
The NCE0208KA uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
General Features  
VDS =200V,ID =8A  
Schematic diagram  
RDS(ON) <300m@ VGS=10VTyp260m)  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Low gate to drain charge to reduce switching losses  
Application  
Power switching application  
Hard switched and high frequency circuits  
Uninterruptible power supply  
Marking and pin assignment  
100% Vds TESTED!  
TO-252-2L top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE0208KA  
NCE0208KA  
TO-252-2L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
200  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
±20  
VGS  
8
5.6  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
20  
A
Maximum Power Dissipation  
55  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
2.3  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
v2.0  

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