Pb Free Product
http://www.ncepower.com
NCE0157AK
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0157AK uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =57A
RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ)
Schematic diagram
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
Marking and pin assignment
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
2500 units
NCE0157AK
NCE0157AK
TO-252-2L
Ø330mm
12mm
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
57
40
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
190
A
Maximum Power Dissipation
170
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
1.13
W/℃
mJ
℃
EAS
342
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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