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NCE0157 PDF预览

NCE0157

更新时间: 2024-11-19 10:28:39
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 405K
描述
NCE N-Channel Enhancement Mode Power MOSFET

NCE0157 数据手册

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Pb Free Product  
http://www.ncepower.com  
NCE0157  
NCE N-Channel Enhancement Mode Power MOSFET  
DESCRIPTION  
The NCE0157 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
GENERAL FEATURES  
VDS = 100V,ID =57A  
RDS(ON) < 23m@ VGS=10V (Typ:13.3m)  
Schematic diagram  
Special process technology for high ESD capability  
High density cell design for ultra low Rdson  
Fully characterized Avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Application  
Marking and pin Assignment  
Power switching application  
Hard Switched and High Frequency Circuits  
Uninterruptible Power Supply  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-220 top view  
Package Marking And Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE0157  
NCE0157  
TO-220  
-
-
-
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter Symbol  
Limit  
100  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
VDS  
VGS  
±20  
V
57  
40  
A
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
190  
200  
1.61  
580  
A
Maximum Power Dissipation  
W
PD  
Derating factor  
W/℃  
mJ  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 150  
TJ,TSTG  
Wuxi NCE Power Semiconductor Co., Ltd  
Page 1  
v1.0  

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NCE N-Channel Enhancement Mode Power MOSFET