Datasheet > NCE0140IA

NCE0140IA

更新时间： 2024-11-20 15:18:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	318K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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中文翻译

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NCE0140IA 数据手册

Pb Free Product

NCE0140IA

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE0140IA uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS= 100V,I_D=40A

Schematic diagram

R_DS(ON)< 17mΩ @ V_GS=10V (Typ:12mΩ)

R_DS(ON)< 18mΩ @ V_GS=4.5V (Typ:13mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Marking and pin assignment

Application

●

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

TO-251 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE0140IA

TO-251

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

160

Maximum Power Dissipation

140

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.93

W/℃

℃

E_AS

400

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page 1

v2.0

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中文翻译

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