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NCE0130KA PDF预览

NCE0130KA

更新时间: 2024-03-03 10:09:31
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 408K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE0130KA 数据手册

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NCE0130KA  
http://www.ncepower.com  
NCE N-Channel Enhancement Mode Power MOSFET  
Description  
The NCE0130KA uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
General Features  
VDS = 100V,ID =30A  
Schematic diagram  
RDS(ON) < 32m@ VGS=10V (Typ:25m)  
RDS(ON) < 35m@ VGS=4.5V (Typ:28m)  
Special process technology for high ESD capability  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Marking and pin assignment  
Application  
Power switching application  
Hard switched and high frequency circuits  
Uninterruptible power supply  
100% UIS TESTED!  
TO-252 -2Ltop view  
100% Vds TESTED!  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE0130KA  
NCE0130KA  
TO-252-2L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
100  
Unit  
Drain-Source Voltage  
V
V
VDS  
Gate-Source Voltage  
±20  
VGS  
Drain Current-Continuous  
30  
21  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current (Note 1)  
ID (100)  
IDM  
A
120  
A
Maximum Power Dissipation  
85  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
0.57  
W/℃  
mJ  
EAS  
200  
Operating Junction and Storage Temperature Range  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance, Junction-to-Case (Note 2)  
RθJC  
1.8  
/W  
Wuxi NCE Power Co., Ltd  
Page 1  
v4.0  

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