NCE0130KA
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0130KA uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =30A
Schematic diagram
RDS(ON) < 32mΩ @ VGS=10V (Typ:25mΩ)
RDS(ON) < 35mΩ @ VGS=4.5V (Typ:28mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Marking and pin assignment
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
TO-252 -2Ltop view
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE0130KA
NCE0130KA
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
V
V
VDS
Gate-Source Voltage
±20
VGS
Drain Current-Continuous
30
21
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current (Note 1)
ID (100℃)
IDM
A
120
A
Maximum Power Dissipation
85
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.57
W/℃
mJ
℃
EAS
200
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance, Junction-to-Case (Note 2)
RθJC
1.8
℃/W
Wuxi NCE Power Co., Ltd
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