Datasheet > NCE0130GA

NCE0130GA

更新时间： 2024-11-20 15:19:35

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	364K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE0130GA 数据手册

http://www.ncepower.com

NCE0130GA

NCE N-Channel Enhancement Mode Power MOSFET

Description

General Features

The NCE0130GA uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

● V_DS= 100V,I_D=30A

R_DS(ON)< 32mΩ @ V_GS=10V (Typ:25mΩ)

_DS(ON)< 35mΩ @ V_GS=4.5V (Typ:28mΩ)

Application

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

DFN 5X6

Top View

Bottom View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE0130GA

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Symbol

Parameter

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VDS

±20

VGS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(TC=100℃)

Pulsed Drain Current

120

Maximum Power Dissipation

Derating factor

P_D

0.68

200

W/℃

E_AS

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

R_θJC

Thermal Resistance, Junction-to-Case ^{(Note 2)}

1.5

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v1.0

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