Datasheet > NCE011N30GU

NCE011N30GU

更新时间： 2024-09-16 17:01:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	922K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE011N30GU 数据手册

NCE011N30GU

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE011N30GU uses advanced trench technology and

General Features

design to provide excellent R_DS(ON)with low gate charge. It can ● V_DS=30V,I_D=325A

be used in a wide variety of applications.

R_DS(ON)=0.75mΩ (typical) @ V_GS=10V

R_DS(ON)=1.5mΩ (typical) @ V_GS=4.5V

● High density cell design for ultra low Rdson

Application

● DC/DC Converter

●

Ideal for high-frequency switching and synchronous ● Very low on-resistance R_DS(on)

rectification

● Good stability and uniformity with high E_AS

● 150 °C operating temperature

● Pb-free lead plating

100% UIS TESTED!

100% ΔVds TESTED!

DFN5X6-8L

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

011N30GU

NCE011N30GU

DFN5x6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VDS

VGS

±20

325

205

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

1300

147

Maximum Power Dissipation

P_D

Derating factor

1.18

1600

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

Thermal Resistance,Junction-to-Ambient ^{(Note 4)}

R_θJC

R_θJA

0.85

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

中文翻译

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