NCE0117AK
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0117AK uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =100V,ID =17A
RDS(ON) < 48mΩ @ VGS=10V (Typ:42mΩ)
RDS(ON) < 53mΩ @ VGS=4.5V (Typ:44mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
●
Power switching application
Marking and pin assignment
●
Hard switched and high frequency circuits
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE0117AK
NCE0117AK
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
17
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
12
A
60
55
A
Maximum Power Dissipation
W
mJ
℃
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
29
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
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