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NBB-312_06 PDF预览

NBB-312_06

更新时间: 2024-11-09 03:46:59
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
8页 184K
描述
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

NBB-312_06 数据手册

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NBB-312  
CASCADABLE BROADBAND  
GaAs MMIC AMPLIFIER DC TO 12GHz  
0
RoHS Compliant & Pb-Free Product  
Typical Applications  
• Narrow and Broadband Commercial and  
• Gain Stage or Driver Amplifiers for  
MWRadio/Optical Designs (PTP/PMP/  
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)  
Military Radio Designs  
• Linear and Saturated Amplifiers  
Product Description  
The NBB-312 cascadable broadband InGaP/GaAs MMIC  
amplifier is a low-cost, high-performance solution for gen-  
eral purpose RF and microwave amplification needs. This  
50Ω gain block is based on a reliable HBT proprietary  
MMIC design, providing unsurpassed performance for  
small-signal applications. Designed with an external bias  
resistor, the NBB-312 provides flexibility and stability. The  
NBB-310 is packaged in a low-cost, surface-mount  
ceramic package, providing ease of assembly for high-  
volume tape-and-reel requirements. It is available in  
either 1,000 or 3,000 piece-per-reel quantities. Connec-  
torized evaluation board designs optimized for high fre-  
quency are also available for characterization purposes.  
2.94 min  
3.28 max  
0.025 min  
0.125 max  
0.50 nom  
0.50 nom  
1.00 min  
1.50 max  
Pin 1  
Indicator  
Pin 1  
Indicator  
RF OUT  
Ground  
RF IN  
N6  
Ground  
Lid ID  
1.70 min  
1.91 max  
0.98 min  
1.02 max  
0.38 nom  
2.39 min  
2.59 max  
0.37 min  
0.63 max  
All Dimensions in Millimeters  
Notes:  
1. Solder pads are coplanar to within ±0.025 mm.  
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.  
3. Mark to include two characters and dot to reference pin 1.  
Optimum Technology Matching® Applied  
Package Style: MPGA, Bowtie, 3x3, Ceramic  
Si BJT  
GaAs HBT  
SiGe HBT  
GaN HEMT  
GaAs MESFET  
Si Bi-CMOS  
InGaP/HBT  
Si CMOS  
Features  
SiGe Bi-CMOS  
9
• Reliable, Low-Cost HBT Design  
• 12.5dB Gain  
• High P1dB of +15.8dBm at 6GHz  
• Single Power Supply Operation  
• 50Ω I/O Matched for High Frequency  
Use  
Pin 1  
Indicator  
1
8
7
2
9
6
3
4
5
RF OUT  
Ground  
Ground  
RF IN  
Ordering Information  
NBB-312  
Cascadable Broadband GaAs MMIC Amplifier DC to  
12GHz  
NBB-312-T1  
NBB-312-E  
NBB-X-K1  
Tape & Reel, 1000 Pieces  
Fully Assembled Evaluation Board  
Extended Frequency InGaP Amp Designer’s Tool Kit  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Greensboro, NC 27409, USA  
Functional Block Diagram  
Rev A5 060124  
4-25  

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