Datasheet > NBB-302

NBB-302

更新时间： 2024-02-05 16:06:30

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
8页	217K
描述
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

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技术参数
数据手册

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NBB-302 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	5A991.G	HTS代码：	8517.70.00.00
风险等级：	5.66	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

NBB-302 数据手册

NBB-302

CASCADABLE BROADBAND

GaAs MMIC AMPLIFIER DC TO 12GHz

RoHS Compliant & Pb-Free Product

Typical Applications

• Narrow and Broadband Commercial and

• Gain Stage or Driver Amplifiers for

MWRadio/Optical Designs (PTP/PMP/

LMDS/UNII/VSAT/WLAN/Cellular/DWDM)

Military Radio Designs

• Linear and Saturated Amplifiers

Product Description

The NBB-302 cascadable broadband InGaP/GaAs MMIC

amplifier is a low-cost, high-performance solution for gen-

eral purpose RF and microwave amplification needs. This

50Ω gain block is based on a reliable HBT proprietary

MMIC design, providing unsurpassed performance for

small-signal applications. Designed with an external bias

resistor, the NBB-302 provides flexibility and stability. The

NBB-302 is packaged in a low-cost, surface-mount

ceramic package, providing ease of assembly for high-

volume tape-and-reel requirements. It is available in

either packaged or chip (NBB-300-D) form, where its gold

metallization is ideal for hybrid circuit designs.

2.94 min

3.28 max

0.025 min

0.125 max

0.50 nom

1.00 min

1.50 max

Pin 1

Indicator

Pin 1

Indicator

RF OUT

Ground

RF IN

Ground

Lid ID

1.70 min

1.91 max

0.98 min

1.02 max

0.38 nom

2.39 min

2.59 max

0.37 min

0.63 max

All Dimensions in Millimeters

Notes:

1. Solder pads are coplanar to within ±0.025 mm.

2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.

3. Mark to include two characters and dot to reference pin 1.

Optimum Technology Matching® Applied

Package Style: MPGA, Bowtie, 3x3, Ceramic

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• Reliable, Low-Cost HBT Design

• 12.0dB Gain, +13.7dBm P1dB@2GHz

• High P1dB of +14.0dBm@6.0GHz and

+11.0dBm@14.0GHz

Pin 1

Indicator

• Single Power Supply Operation

• 50Ω I/O Matched for High Freq. Use

RF OUT

Ground

RF IN

Ground

Ordering Information

NBB-302

Cascadable Broadband GaAs MMIC Amplifier DC to

12GHz

NBB-302-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NBB-302-E

NBB-X-K1

Fully Assembled Evaluation Board

Extended Frequency InGaP Amp Designer’s Tool Kit

RF Micro Devices, Inc.

7628 Thorndike Road

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Greensboro, NC 27409, USA

Functional Block Diagram

Rev A5 050414

4-9

12 3 4 5 6 7 8

中文翻译

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