NANDxxxxNx
Large page NAND flash memory and
low power SDRAM, 1.8/2.6 V MCP and PoP
Features
FBGA
n
MCP (multichip package) and PoP (package
on package)
TFBGA107 10.5 × 13 × 1.2 mm
TFBGA137 10.5 x 13 x 1.2 mm
LFBGA137 10.5 x 13 x 1.4 mm
TFBGA149 10 × 13.5 × 1.2 mm
VFBGA160 15 x 15 x 1 mm
– NAND flash memory
– 1-, 2-, 4-, 2x2-Gbit large page size NAND
flash memory
– 256-, 512-, 2x512-, 128+256/512-Mbit or
1-Gbit (x16/x32) SDR/DDR LPSDRAM
FBGA
n
n
Temperature range: -30 up to 85 °C
Supply voltage
– NAND flash: V
– LPSDRAM: V
= 1.7-1.95 V or 2.5-3.6 V
DDF
VFBGA152 14 x 14 x 0.9 mm
TFBGA152 14×14 × 1.1 mm
TFBGA152 14 × 14 × 1.2 mm
TFBGA128 12 x 12 x 1.1 mm
= V
= 1.7-1.95 V
DDQD
DDD
n
n
Electronic signature
®
ECOPACK packages
Single or double data rate LPSDRAM
Flash memory
n
n
n
n
n
n
n
Interface: x16/32 bus width
n
n
n
n
Nand interface
– x8 or x16 bus width
Deep power-down mode
– Multiplexed address/data
Page size
1.8 V LVCMOS interface
Quad internal banks controlled by BA0, BA1
Wrap sequence: sequential/interleaved
Automatic and controlled precharge
Auto refresh and self refresh
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128K + 4K spare) bytes
– x16 device: (64K + 2K spare) words
– 8192 or 4096 (for 128 Mbits) refresh
cycles/64 ms
Page read/program
– Programmable partial array self refresh
– Auto temperature compensated self refresh
– Random access: 25 µs (max)
– Sequential access: 25/30 ns (min)
– Page program time: 200 µs (typ)
Table 1.
Device summary
NANDxxxxNx
n
n
n
n
n
Copy back program mode
Fast block erase: 1.5/2 ms (typ)
Chip Enable ‘don’t care’
Status register
NANDA0R3N0
NANDA9R4Nx
NANDBAR3Nx
NANDB9R3N0
NANDA8R3N0
NANDA9R3Nx
NANDA9WxN1 NANDB0R3N0
NANDBAR4Nx
NANDB9R4Nx
NANDB1R3N0
NANDC9R4N0
Data integrity
NANDBAW4N1 NANDCAW4N1 NANDCBR4N3
NANDC3R4N5 NANDD3R4N5 NANDDBR3N5
– 100 000 program/erase cycles
– 10 years data retention
October 2008
Rev 12
1/52
www.numonyx.com
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