Datasheet > NANDA9W3M1AZBC5F

NANDA9W3M1AZBC5F

更新时间： 2024-02-03 08:43:30

品牌	Logo	应用领域
恒忆 - NUMONYX		动态存储器内存集成电路
页数	文件大小	规格书
33页	724K
描述
Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-137

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NANDA9W3M1AZBC5F 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	FBGA, BGA137,10X15,32	Reach Compliance Code：	compliant
风险等级：	5.84	JESD-30 代码：	R-PBGA-B137
内存集成电路类型：	MEMORY CIRCUIT	混合内存类型：	FLASH+SDRAM
端子数量：	137	最高工作温度：	85 °C
最低工作温度：	-30 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA137,10X15,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
电源：	3 V	认证状态：	Not Qualified
子类别：	Other Memory ICs	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	Base Number Matches：	1

NANDA9W3M1AZBC5F 数据手册

NANDxxxxMx

256/512-Mbit or 1-Gbit (x8/x16, 1.8/2.6 V, 528-byte page) NAND

flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP

Features

FBGA

Packages

– MCP (multichip package)

– PoP (package on package)

TFBGA107 10.5 × 13 × 1.2 mm (ZBB)

TFBGA149 10 × 13.5 × 1.2 mm (ZBA)

TFBGA137 10.5 × 13 × 1.2 mm (ZBC)

LFBGA137 10.5 × 13 × 1.4 mm (ZBC)

Device composition

– 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)

SLC small page NAND flash memory

– 1 die of 256 or 512 Mbits (x16 or x32)

SDR/DDR LPSDRAM

FBGA

Supply voltages

– V

= 1.7 V to 1.95 V or 2.5 V to 3.6 V

DDF

DDD

TFBGA152 14 x 14 x 1.1 mm (ZPA)

= V

= 1.7 V to 1.95 V

DDQD

Electronic signature

Data integrity

– 100 000 program/erase cycles

– 10 years data retention

ECOPACK packages

Temperature range: –30 to 85 °C

Single or double data rate LPSDRAM

Flash memory

Interface: ×16 or ×32 bus width

Deep power-down mode

NAND interface

– x8/x16 bus width

– Multiplexed address/data

1.8 V LVCMOS interface

Page size

Quad internal banks controlled by BA0, BA1

Automatic and controlled precharge

– x8 device: (512 + 16 spare) bytes

– x16 device: (256 + 8 spare) words

Auto refresh and self refresh

Block size

– 8 192 refresh cycles/64 ms

– x8 device: (16K + 512 spare) bytes

– x16 device: (8K + 256 spare) words

– Programmable partial array self refresh

– Auto temperature compensated self refresh

Page read/program

Wrap sequence: sequential/interleave

– Random access: 12 µs (3 V), 15 µs (1.8 V)

Burst termination by Burst Stop command and

Precharge command

– Sequential access: 30 ns (3 V), 50 ns

(1.8 V)

– Page program time: 200 µs (typ)

Table 1.

Device summary

NAND88R3M0 NAND99W3M0 NAND98R4M2

NAND98R3M0 NAND99W3M1 NAND99R3M1

NAND98W3M0 NANDA9W3M1

Copy back program mode

– Fast page copy without external buffering

Fast block erase

NAND99R3M0 NAND99R4M2

– Block erase time: 2 ms (typ)

– Status register

NAND99R3M2 NAND98W3M1

NAND98R3M1 NAND98R3M2

October 2008

Rev 13

1/32

www.numonyx.com

12 3 4 5 6 7...33

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与NANDA9W3M1AZBC5F相关器件

型号	品牌	描述	获取价格	数据表
NANDA9W3M1BZBC5E	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NANDA9W3M1CZBC5E	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NANDA9W3M1CZBC5F	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA137	获取价格
NANDA9W3N1AZBC5E	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NANDA9W3N1AZBC5F	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NANDA9W3N1BZBC5E	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格

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