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NANDA9R4N6DZBA5F

更新时间： 2024-11-03 05:52:19
品牌 Logo 应用领域
恒忆 - NUMONYX 动态存储器
页数 文件大小 规格书
52页 1126K
描述
Memory Circuit, Flash+SDRAM, PBGA149

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中文翻译

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NANDA9R4N6DZBA5F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：BGA
包装说明：TFBGA, BGA149,12X16,32针数：149
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.84

NANDA9R4N6DZBA5F 数据手册

 浏览型号NANDA9R4N6DZBA5F的Datasheet PDF文件第2页浏览型号NANDA9R4N6DZBA5F的Datasheet PDF文件第3页浏览型号NANDA9R4N6DZBA5F的Datasheet PDF文件第4页浏览型号NANDA9R4N6DZBA5F的Datasheet PDF文件第5页浏览型号NANDA9R4N6DZBA5F的Datasheet PDF文件第6页浏览型号NANDA9R4N6DZBA5F的Datasheet PDF文件第7页 
NANDxxxxNx  
Large page NAND flash memory and  
low power SDRAM, 1.8/2.6 V MCP and PoP  
Features  
FBGA  
n
MCP (multichip package) and PoP (package  
on package)  
TFBGA107 10.5 × 13 × 1.2 mm  
TFBGA137 10.5 x 13 x 1.2 mm  
LFBGA137 10.5 x 13 x 1.4 mm  
TFBGA149 10 × 13.5 × 1.2 mm  
VFBGA160 15 x 15 x 1 mm  
– NAND flash memory  
– 1-, 2-, 4-, 2x2-Gbit large page size NAND  
flash memory  
– 256-, 512-, 2x512-, 128+256/512-Mbit or  
1-Gbit (x16/x32) SDR/DDR LPSDRAM  
FBGA  
n
n
Temperature range: -30 up to 85 °C  
Supply voltage  
– NAND flash: V  
– LPSDRAM: V  
= 1.7-1.95 V or 2.5-3.6 V  
DDF  
VFBGA152 14 x 14 x 0.9 mm  
TFBGA152 14×14 × 1.1 mm  
TFBGA152 14 × 14 × 1.2 mm  
TFBGA128 12 x 12 x 1.1 mm  
= V  
= 1.7-1.95 V  
DDQD  
DDD  
n
n
Electronic signature  
®
ECOPACK packages  
Single or double data rate LPSDRAM  
Flash memory  
n
n
n
n
n
n
n
Interface: x16/32 bus width  
n
n
n
n
Nand interface  
– x8 or x16 bus width  
Deep power-down mode  
– Multiplexed address/data  
Page size  
1.8 V LVCMOS interface  
Quad internal banks controlled by BA0, BA1  
Wrap sequence: sequential/interleaved  
Automatic and controlled precharge  
Auto refresh and self refresh  
– x8 device: (2048 + 64 spare) bytes  
– x16 device: (1024 + 32 spare) words  
Block size  
– x8 device: (128K + 4K spare) bytes  
– x16 device: (64K + 2K spare) words  
– 8192 or 4096 (for 128 Mbits) refresh  
cycles/64 ms  
Page read/program  
– Programmable partial array self refresh  
– Auto temperature compensated self refresh  
– Random access: 25 µs (max)  
– Sequential access: 25/30 ns (min)  
– Page program time: 200 µs (typ)  
Table 1.  
Device summary  
NANDxxxxNx  
n
n
n
n
n
Copy back program mode  
Fast block erase: 1.5/2 ms (typ)  
Chip Enable ‘don’t care’  
Status register  
NANDA0R3N0  
NANDA9R4Nx  
NANDBAR3Nx  
NANDB9R3N0  
NANDA8R3N0  
NANDA9R3Nx  
NANDA9WxN1 NANDB0R3N0  
NANDBAR4Nx  
NANDB9R4Nx  
NANDB1R3N0  
NANDC9R4N0  
Data integrity  
NANDBAW4N1 NANDCAW4N1 NANDCBR4N3  
NANDC3R4N5 NANDD3R4N5 NANDDBR3N5  
– 100 000 program/erase cycles  
– 10 years data retention  
October 2008  
Rev 12  
1/52  
www.numonyx.com  
1
1234567...52

中文翻译

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与NANDA9R4N6DZBA5F相关器件

型号 品牌 获取价格 描述 数据表
NANDA9W3M1AZBC5E NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3M1AZBC5F NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3M1BZBC5E NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3M1CZBC5E NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3M1CZBC5F NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137
NANDA9W3N1AZBC5E NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3N1AZBC5F NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3N1BZBC5E NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3N1BZBC5F NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9W3N1CZBC5E NUMONYX

获取价格

 		Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C

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