是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.68 |
JESD-30 代码: | R-PBGA-B107 | 内存集成电路类型: | MEMORY CIRCUIT |
混合内存类型: | FLASH+SDRAM | 端子数量: | 107 |
最高工作温度: | 85 °C | 最低工作温度: | -30 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA107,10X14,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8 V |
认证状态: | Not Qualified | 子类别: | Other Memory ICs |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NANDA9R3N6DZBB5E | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C | |
NANDA9R3N6DZBB5F | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA107 | |
NANDA9R4N0AZBA5E | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA149, | |
NANDA9R4N0AZBA5F | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA149 | |
NANDA9R4N0BZBA5F | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA149 | |
NANDA9R4N0DZBA5E | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C | |
NANDA9R4N0DZBA5F | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA149 | |
NANDA9R4N1AZBC5E | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C | |
NANDA9R4N1AZBC5F | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C | |
NANDA9R4N1BZBC5F | NUMONYX |
获取价格 |
Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C |