Datasheet > NANDA9R3N3DZBC5E

NANDA9R3N3DZBC5E

更新时间： 2024-11-03 08:18:43

品牌	Logo	应用领域
恒忆 - NUMONYX		动态存储器
页数	文件大小	规格书
52页	1126K
描述
Memory Circuit, Flash+SDRAM, PBGA137

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NANDA9R3N3DZBC5E 数据手册

NANDxxxxNx

Large page NAND flash memory and

low power SDRAM, 1.8/2.6 V MCP and PoP

Features

FBGA

MCP (multichip package) and PoP (package

on package)

TFBGA107 10.5 × 13 × 1.2 mm

TFBGA137 10.5 x 13 x 1.2 mm

LFBGA137 10.5 x 13 x 1.4 mm

TFBGA149 10 × 13.5 × 1.2 mm

VFBGA160 15 x 15 x 1 mm

– NAND flash memory

– 1-, 2-, 4-, 2x2-Gbit large page size NAND

flash memory

– 256-, 512-, 2x512-, 128+256/512-Mbit or

1-Gbit (x16/x32) SDR/DDR LPSDRAM

FBGA

Temperature range: -30 up to 85 °C

Supply voltage

– NAND flash: V

– LPSDRAM: V

= 1.7-1.95 V or 2.5-3.6 V

DDF

VFBGA152 14 x 14 x 0.9 mm

TFBGA152 14×14 × 1.1 mm

TFBGA152 14 × 14 × 1.2 mm

TFBGA128 12 x 12 x 1.1 mm

= V

= 1.7-1.95 V

DDQD

DDD

Electronic signature

ECOPACK packages

Single or double data rate LPSDRAM

Flash memory

Interface: x16/32 bus width

Nand interface

– x8 or x16 bus width

Deep power-down mode

– Multiplexed address/data

Page size

1.8 V LVCMOS interface

Quad internal banks controlled by BA0, BA1

Wrap sequence: sequential/interleaved

Automatic and controlled precharge

Auto refresh and self refresh

– x8 device: (2048 + 64 spare) bytes

– x16 device: (1024 + 32 spare) words

Block size

– x8 device: (128K + 4K spare) bytes

– x16 device: (64K + 2K spare) words

– 8192 or 4096 (for 128 Mbits) refresh

cycles/64 ms

Page read/program

– Programmable partial array self refresh

– Auto temperature compensated self refresh

– Random access: 25 µs (max)

– Sequential access: 25/30 ns (min)

– Page program time: 200 µs (typ)

Table 1.

Device summary

NANDxxxxNx

Copy back program mode

Fast block erase: 1.5/2 ms (typ)

Chip Enable ‘don’t care’

Status register

NANDA0R3N0

NANDA9R4Nx

NANDBAR3Nx

NANDB9R3N0

NANDA8R3N0

NANDA9R3Nx

NANDA9WxN1 NANDB0R3N0

NANDBAR4Nx

NANDB9R4Nx

NANDB1R3N0

NANDC9R4N0

Data integrity

NANDBAW4N1 NANDCAW4N1 NANDCBR4N3

NANDC3R4N5 NANDD3R4N5 NANDDBR3N5

– 100 000 program/erase cycles

– 10 years data retention

October 2008

Rev 12

1/52

www.numonyx.com

12 3 4 5 6 7...52

中文翻译

下载PDF

与NANDA9R3N3DZBC5E相关器件

型号	品牌	获取价格	描述	数据表
NANDA9R3N6AZBB5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9R3N6BZBB5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9R3N6BZBB5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9R3N6CZBB5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107,
NANDA9R3N6DZBB5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NANDA9R3N6DZBB5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107
NANDA9R4N0AZBA5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA149,
NANDA9R4N0AZBA5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA149
NANDA9R4N0BZBA5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA149
NANDA9R4N0DZBA5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C

与NANDA9R3N3DZBC5E相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

NANDA9R3N3DZBC5E

NANDA9R3N3DZBC5E 数据手册

与NANDA9R3N3DZBC5E相关器件

与NANDA9R3N3DZBC5E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NANDA9R3N3DZBC5E

NANDA9R3N3DZBC5E 数据手册

与NANDA9R3N3DZBC5E相关器件

与NANDA9R3N3DZBC5E相关文章

您还可以找

您在本页遇到什么问题？