Datasheet > NAND99R4M2CZBA5F

NAND99R4M2CZBA5F

更新时间： 2024-11-10 06:37:07

品牌	Logo	应用领域
恒忆 - NUMONYX		动态存储器
页数	文件大小	规格书
33页	724K
描述
Memory Circuit, Flash+SDRAM, PBGA149

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中文翻译

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数据手册

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NAND99R4M2CZBA5F 数据手册

NANDxxxxMx

256/512-Mbit or 1-Gbit (x8/x16, 1.8/2.6 V, 528-byte page) NAND

flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP

Features

FBGA

Packages

– MCP (multichip package)

– PoP (package on package)

TFBGA107 10.5 × 13 × 1.2 mm (ZBB)

TFBGA149 10 × 13.5 × 1.2 mm (ZBA)

TFBGA137 10.5 × 13 × 1.2 mm (ZBC)

LFBGA137 10.5 × 13 × 1.4 mm (ZBC)

Device composition

– 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)

SLC small page NAND flash memory

– 1 die of 256 or 512 Mbits (x16 or x32)

SDR/DDR LPSDRAM

FBGA

Supply voltages

– V

= 1.7 V to 1.95 V or 2.5 V to 3.6 V

DDF

DDD

TFBGA152 14 x 14 x 1.1 mm (ZPA)

= V

= 1.7 V to 1.95 V

DDQD

Electronic signature

Data integrity

– 100 000 program/erase cycles

– 10 years data retention

ECOPACK packages

Temperature range: –30 to 85 °C

Single or double data rate LPSDRAM

Flash memory

Interface: ×16 or ×32 bus width

Deep power-down mode

NAND interface

– x8/x16 bus width

– Multiplexed address/data

1.8 V LVCMOS interface

Page size

Quad internal banks controlled by BA0, BA1

Automatic and controlled precharge

– x8 device: (512 + 16 spare) bytes

– x16 device: (256 + 8 spare) words

Auto refresh and self refresh

Block size

– 8 192 refresh cycles/64 ms

– x8 device: (16K + 512 spare) bytes

– x16 device: (8K + 256 spare) words

– Programmable partial array self refresh

– Auto temperature compensated self refresh

Page read/program

Wrap sequence: sequential/interleave

– Random access: 12 µs (3 V), 15 µs (1.8 V)

Burst termination by Burst Stop command and

Precharge command

– Sequential access: 30 ns (3 V), 50 ns

(1.8 V)

– Page program time: 200 µs (typ)

Table 1.

Device summary

NAND88R3M0 NAND99W3M0 NAND98R4M2

NAND98R3M0 NAND99W3M1 NAND99R3M1

NAND98W3M0 NANDA9W3M1

Copy back program mode

– Fast page copy without external buffering

Fast block erase

NAND99R3M0 NAND99R4M2

– Block erase time: 2 ms (typ)

– Status register

NAND99R3M2 NAND98W3M1

NAND98R3M1 NAND98R3M2

October 2008

Rev 13

1/32

www.numonyx.com

12 3 4 5 6 7...33

中文翻译

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与NAND99R4M2CZBA5F相关器件

型号	品牌	获取价格	描述	数据表
NAND99W3M0AZBB5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107
NAND99W3M0AZBB5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107
NAND99W3M0CZBB5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NAND99W3M1AZBC5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NAND99W3M1AZBC5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NAND99W3M1BZBC5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C
NAND99W3M1CZBC5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA137
NANDA0R3N0AZPA5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA152, 14 X 14 MM, 1.10 MM HEIGHT, 0.65 MM PITCH, TFBGA-152
NANDA0R3N0AZPA5F	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA152
NANDA0R3N0AZQA5E	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA152,

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