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NAND512W4A2DZD6E PDF预览

NAND512W4A2DZD6E

更新时间: 2024-10-01 05:23:35
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
53页 1330K
描述
Flash Memory

NAND512W4A2DZD6E 数据手册

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NAND512xxA2D  
NAND01GxxA2C  
512-Mbit, 1-Gbit, 528-byte/264-word page,  
1.8 V/3 V, NAND flash memories  
Preliminary Data  
Features  
High density NAND flash memories  
512-Mbit, 1-Gbit memory array  
Cost effective solutions for mass  
storage applications  
NAND interface  
TSOP48 12 x 20 mm (N)  
FBGA  
x8 or x16 bus width  
Multiplexed address/ data  
Supply voltage: 1.8 V, 3 V  
Page size  
x8 device: (512 + 16 spare) bytes  
x16 device: (256 + 8 spare) words  
VFBGA55 8 x 10 x 1 mm (ZD)  
Block size  
x8 device: (16 K + 512 spare) bytes  
x16 device: (8 K + 256 spare) words  
Hardware data protection: program/erase  
locked during power transitions  
Security features  
Page read/program  
OTP area  
Random access:  
12 µs (3 V)/15 µs (1.8 V) (max)  
Serial number (unique ID) option  
Sequential access:  
30 ns (3 V)/50 ns (1.8 V) (min)  
Data integrity  
100,000 program/erase cycles (with  
ECC)  
Page program time: 200 µs (typ)  
Copy back program mode  
Fast block erase: 1.5 ms (typ)  
Status register  
10 years data retention  
RoHS compliant packages  
Development tools  
Electronic signature  
Error correction code models  
Chip Enable ‘don’t care’  
Bad blocks management and wear  
leveling algorithms  
Hardware simulation models  
Table 1.  
Device summary  
NAND512xxA2D  
NAND01GxxA2C  
NAND512R3A2D  
NAND512R4A2D  
NAND512W3A2D  
NAND512W4A2D  
NAND01GR3A2C  
NAND01GR4A2C  
NAND01GW3A2C  
NAND01GW4A2C  
February 2009  
Rev 2  
1/53  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1

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