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NAND512W4A2DZA6E PDF预览

NAND512W4A2DZA6E

更新时间: 2024-11-02 19:57:51
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
53页 1334K
描述
Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63

NAND512W4A2DZA6E 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63针数:63
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.65
Is Samacsys:N最长访问时间:12000 ns
JESD-30 代码:R-PBGA-B63JESD-609代码:e1
长度:11 mm内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:63
字数:33554432 words字数代码:32000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.05 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NAND TYPE宽度:9 mm
Base Number Matches:1

NAND512W4A2DZA6E 数据手册

 浏览型号NAND512W4A2DZA6E的Datasheet PDF文件第2页浏览型号NAND512W4A2DZA6E的Datasheet PDF文件第3页浏览型号NAND512W4A2DZA6E的Datasheet PDF文件第4页浏览型号NAND512W4A2DZA6E的Datasheet PDF文件第5页浏览型号NAND512W4A2DZA6E的Datasheet PDF文件第6页浏览型号NAND512W4A2DZA6E的Datasheet PDF文件第7页 
NAND512xxA2D  
NAND01GxxA2C  
512-Mbit, 1-Gbit, 528-byte/264-word page,  
1.8 V/3 V, SLC NAND flash memories  
Features  
High density SLC NAND flash memories  
512-Mbit, 1-Gbit memory array  
Cost effective solutions for mass  
storage applications  
NAND interface  
TSOP48 12 x 20 mm (N)  
x8 or x16 bus width  
Multiplexed address/ data  
FBGA  
Supply voltage: 1.8 V, 3 V  
Page size  
VFBGA63 9 x 11 x 1.05 mm (ZA)  
x8 device: (512 + 16 spare) bytes  
x16 device: (256 + 8 spare) words  
Block size  
Hardware data protection: program/erase  
locked during power transitions  
x8 device: (16 K + 512 spare) bytes  
x16 device: (8 K + 256 spare) words  
Security features  
Page read/program  
OTP area  
Random access:  
12 µs (3 V)/15 µs (1.8 V) (max)  
Serial number (unique ID)  
Data integrity  
Sequential access:  
30 ns (3 V)/50 ns (1.8 V) (min)  
100,000 program/erase cycles (with  
ECC)  
Page program time: 200 µs (typ)  
10 years data retention  
Copy back program mode  
Fast block erase: 1.5 ms (typ)  
Status register  
RoHS compliant packages  
Development tools  
Error correction code models  
Electronic signature  
Bad blocks management and wear  
leveling algorithms  
Chip Enable ‘don’t care’  
Hardware simulation models  
Table 1.  
Device summary  
NAND512xxA2D  
NAND01GxxA2C  
NAND512R3A2D  
NAND512R4A2D  
NAND512W3A2D  
NAND512W4A2D  
NAND01GR3A2C  
NAND01GR4A2C  
NAND01GW3A2C  
NAND01GW4A2C  
November 2009  
Rev 7  
1/53  
www.numonyx.com  
1

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