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NAND512W4A2DN6E PDF预览

NAND512W4A2DN6E

更新时间: 2024-11-03 07:07:07
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管
页数 文件大小 规格书
53页 1334K
描述
Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

NAND512W4A2DN6E 数据手册

 浏览型号NAND512W4A2DN6E的Datasheet PDF文件第2页浏览型号NAND512W4A2DN6E的Datasheet PDF文件第3页浏览型号NAND512W4A2DN6E的Datasheet PDF文件第4页浏览型号NAND512W4A2DN6E的Datasheet PDF文件第5页浏览型号NAND512W4A2DN6E的Datasheet PDF文件第6页浏览型号NAND512W4A2DN6E的Datasheet PDF文件第7页 
NAND512xxA2D  
NAND01GxxA2C  
512-Mbit, 1-Gbit, 528-byte/264-word page,  
1.8 V/3 V, SLC NAND flash memories  
Features  
High density SLC NAND flash memories  
512-Mbit, 1-Gbit memory array  
Cost effective solutions for mass  
storage applications  
NAND interface  
TSOP48 12 x 20 mm (N)  
x8 or x16 bus width  
Multiplexed address/ data  
FBGA  
Supply voltage: 1.8 V, 3 V  
Page size  
VFBGA63 9 x 11 x 1.05 mm (ZA)  
x8 device: (512 + 16 spare) bytes  
x16 device: (256 + 8 spare) words  
Block size  
Hardware data protection: program/erase  
locked during power transitions  
x8 device: (16 K + 512 spare) bytes  
x16 device: (8 K + 256 spare) words  
Security features  
Page read/program  
OTP area  
Random access:  
12 µs (3 V)/15 µs (1.8 V) (max)  
Serial number (unique ID)  
Data integrity  
Sequential access:  
30 ns (3 V)/50 ns (1.8 V) (min)  
100,000 program/erase cycles (with  
ECC)  
Page program time: 200 µs (typ)  
10 years data retention  
Copy back program mode  
Fast block erase: 1.5 ms (typ)  
Status register  
RoHS compliant packages  
Development tools  
Error correction code models  
Electronic signature  
Bad blocks management and wear  
leveling algorithms  
Chip Enable ‘don’t care’  
Hardware simulation models  
Table 1.  
Device summary  
NAND512xxA2D  
NAND01GxxA2C  
NAND512R3A2D  
NAND512R4A2D  
NAND512W3A2D  
NAND512W4A2D  
NAND01GR3A2C  
NAND01GR4A2C  
NAND01GW3A2C  
NAND01GW4A2C  
November 2009  
Rev 7  
1/53  
www.numonyx.com  
1

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NAND512W4A2DZA6E STMICROELECTRONICS

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32MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A2DZA6E NUMONYX

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Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT,
NAND512W4A2DZD6E NUMONYX

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32MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
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32MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
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Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
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Flash, 32MX16, 12000ns, PDSO48, 12 X 17 MM, PLASTIC, WSOP-48
NAND512W4A3AV6E STMICROELECTRONICS

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32MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48
NAND512W4A3AV6F STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PDSO48, 12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48
NAND512W4A3AV6T STMICROELECTRONICS

获取价格

Flash, 32MX16, 12000ns, PDSO48, 12 X 17 MM, PLASTIC, WSOP-48