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NAND512W4A2CZB6T

更新时间： 2024-11-02 05:26:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路
页数 文件大小 规格书
57页 916K
描述
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

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NAND512W4A2CZB6T 数据手册

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NAND128-A, NAND256-A  
NAND512-A, NAND01G-A  
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)  
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories  
FEATURES SUMMARY  
■
HIGH DENSITY NAND FLASH MEMORIES  
Figure 1. Packages  
–
–
–
Up to 1 Gbit memory array  
Up to 32 Mbit spare area  
Cost effective solutions for mass storage  
applications  
■
NAND INTERFACE  
TSOP48 12 x 20mm  
–
–
–
x8 or x16 bus width  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
■
■
■
■
SUPPLY VOLTAGE  
–
–
1.8V device: VDD = 1.7 to 1.95V  
3.0V device: VDD = 2.7 to 3.6V  
USOP48 12 x 17 x 0.65mm  
PAGE SIZE  
–
–
x8 device: (512 + 16 spare) Bytes  
x16 device: (256 + 8 spare) Words  
FBGA  
BLOCK SIZE  
–
–
x8 device: (16K + 512 spare) Bytes  
x16 device: (8K + 256 spare) Words  
VFBGA55 8 x 10 x 1mm  
TFBGA55 8 x 10 x 1.2mm  
VFBGA63 9 x 11 x 1mm  
TFBGA63 9 x 11 x 1.2mm  
PAGE READ / PROGRAM  
–
–
–
Random access: 12µs (max)  
Sequential access: 50ns (min)  
Page program time: 200µs (typ)  
■
DATA INTEGRITY  
■
■
COPY BACK PROGRAM MODE  
Fast page copy without external buffering  
FAST BLOCK ERASE  
Block erase time: 2ms (Typ)  
–
–
100,000 Program/Erase cycles  
10 years Data Retention  
–
■
■
RoHS COMPLIANCE  
–
–
Lead-Free Components are Compliant  
with the RoHS Directive  
■
■
■
STATUS REGISTER  
ELECTRONIC SIGNATURE  
CHIP ENABLE ‘DON’T CARE’ OPTION  
DEVELOPMENT TOOLS  
–
Error Correction Code software and  
hardware models  
–
Simple interface with microcontroller  
–
Bad Blocks Management and Wear  
Leveling algorithms  
■
■
SERIAL NUMBER OPTION  
HARDWARE DATA PROTECTION  
–
–
File System OS Native reference software  
Hardware simulation models  
–
Program/Erase locked during Power  
transitions  
February 2005  
1/57  
1234567...57

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与NAND512W4A2CZB6T相关器件

型号 品牌 获取价格 描述 数据表
NAND512W4A2DN6E NUMONYX

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 		Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND512W4A2DZA6E STMICROELECTRONICS

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 		32MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND512W4A2DZA6E NUMONYX

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 		Flash, 32MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT,
NAND512W4A2DZD6E NUMONYX

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 		Flash Memory
NAND512W4A3AN1 STMICROELECTRONICS

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 		32MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND512W4A3AN1F STMICROELECTRONICS

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 		32MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
NAND512W4A3AN1T STMICROELECTRONICS

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 		Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND512W4A3AV6 STMICROELECTRONICS

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 		Flash, 32MX16, 12000ns, PDSO48, 12 X 17 MM, PLASTIC, WSOP-48
NAND512W4A3AV6E STMICROELECTRONICS

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 		32MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48
NAND512W4A3AV6F STMICROELECTRONICS

获取价格

 		Flash, 32MX16, 12000ns, PDSO48, 12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48

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