5秒后页面跳转
NAND128W4A0AZA1F PDF预览

NAND128W4A0AZA1F

更新时间: 2024-11-21 05:26:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路
页数 文件大小 规格书
57页 916K
描述
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

NAND128W4A0AZA1F 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55
针数:55Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.15最长访问时间:35 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PBGA-B55JESD-609代码:e1
长度:10 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1K
端子数量:55字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA55,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
页面大小:256 words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.05 mm
部门规模:8K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:8 mm
Base Number Matches:1

NAND128W4A0AZA1F 数据手册

 浏览型号NAND128W4A0AZA1F的Datasheet PDF文件第2页浏览型号NAND128W4A0AZA1F的Datasheet PDF文件第3页浏览型号NAND128W4A0AZA1F的Datasheet PDF文件第4页浏览型号NAND128W4A0AZA1F的Datasheet PDF文件第5页浏览型号NAND128W4A0AZA1F的Datasheet PDF文件第6页浏览型号NAND128W4A0AZA1F的Datasheet PDF文件第7页 
NAND128-A, NAND256-A  
NAND512-A, NAND01G-A  
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)  
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories  
FEATURES SUMMARY  
HIGH DENSITY NAND FLASH MEMORIES  
Figure 1. Packages  
Up to 1 Gbit memory array  
Up to 32 Mbit spare area  
Cost effective solutions for mass storage  
applications  
NAND INTERFACE  
TSOP48 12 x 20mm  
x8 or x16 bus width  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
SUPPLY VOLTAGE  
1.8V device: VDD = 1.7 to 1.95V  
3.0V device: VDD = 2.7 to 3.6V  
USOP48 12 x 17 x 0.65mm  
PAGE SIZE  
x8 device: (512 + 16 spare) Bytes  
x16 device: (256 + 8 spare) Words  
FBGA  
BLOCK SIZE  
x8 device: (16K + 512 spare) Bytes  
x16 device: (8K + 256 spare) Words  
VFBGA55 8 x 10 x 1mm  
TFBGA55 8 x 10 x 1.2mm  
VFBGA63 9 x 11 x 1mm  
TFBGA63 9 x 11 x 1.2mm  
PAGE READ / PROGRAM  
Random access: 12µs (max)  
Sequential access: 50ns (min)  
Page program time: 200µs (typ)  
DATA INTEGRITY  
COPY BACK PROGRAM MODE  
Fast page copy without external buffering  
FAST BLOCK ERASE  
Block erase time: 2ms (Typ)  
100,000 Program/Erase cycles  
10 years Data Retention  
RoHS COMPLIANCE  
Lead-Free Components are Compliant  
with the RoHS Directive  
STATUS REGISTER  
ELECTRONIC SIGNATURE  
CHIP ENABLE ‘DON’T CARE’ OPTION  
DEVELOPMENT TOOLS  
Error Correction Code software and  
hardware models  
Simple interface with microcontroller  
Bad Blocks Management and Wear  
Leveling algorithms  
SERIAL NUMBER OPTION  
HARDWARE DATA PROTECTION  
File System OS Native reference software  
Hardware simulation models  
Program/Erase locked during Power  
transitions  
February 2005  
1/57  

与NAND128W4A0AZA1F相关器件

型号 品牌 获取价格 描述 数据表
NAND128W4A0AZA1T STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZA6 STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZA6E STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZA6F STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZA6T STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZB1 STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZB1E STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZB1F STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZB1T STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND128W4A0AZB6 STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash