Datasheet > NAND08GW3C4BZL1E

NAND08GW3C4BZL1E

更新时间： 2024-11-26 03:23:39

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
60页	1134K
描述
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

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NAND08GW3C4BZL1E 数据手册

NAND08GW3C2B

NAND16GW3C4B

8 or 16 Gbit, 2112 byte page,

3 V supply, multilevel, multiplane, NAND Flash memory

Target Specification

Features

■ High density multilevel cell (MLC) Flash

memory

– Up to 16 Gbit memory array

– Up to 512 Mbit spare area

– Cost-effective solutions for mass storage

applications

■ NAND interface

TSOP48 12 x 20 mm (N)

– x8 bus width

– Multiplexed address/data

■ Supply voltage: V = 2.7 to 3.6 V

■ Page size: (2048 + 64 spare) bytes

■ Block size: (256K + 8K spare) bytes

LGA52 12 x 17 mm (N)

■ Multiplane architecture

– Array split into two independent planes

– Program/erase operations can be

■ Serial number option

performed on both planes at the same time

■ Chip enable ‘don’t care’

■ Data protection

■ Memory cell array:

(2 K + 64 ) bytes x 128 pages x 4096 blocks

– Hardware program/erase locked during

power transitions

■ Page read/program

– Random access: 60 µs (max)

– Sequential access: 25 ns (min)

– Page program operation time: 800 µs (typ)

■ Development tools

– Error correction code models

– Bad block management and wear leveling

algorithm

■ Multipage program time (2 pages): 800 µs (typ)

– HW simulation models

■ Copy-back program

– Fast page copy

■ Data integrity

– 10,000 program/erase cycles (with ECC)

■ Fast block erase

– 10 years data retention

– Block erase time: 2.5 ms (typ)

■ ECOPACK packages available

■ Multiblock erase time (2 blocks): 2.5 ms (typ)

■ Status register

■ Electronic signature

March 2008

Rev 2

1/60

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.numonyx.com

12 3 4 5 6 7...60

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与NAND08GW3C4BZL1E相关器件

型号	品牌	获取价格	描述	数据表
NAND08GW3C4BZL1F	NUMONYX	获取价格	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C4BZL6E	NUMONYX	获取价格	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C4BZL6F	NUMONYX	获取价格	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW4B2AN1F	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GW4B2AN6	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GW4B2AN6E	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GW4B2AN6F	STMICROELECTRONICS	获取价格	512MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
NAND08GW4B2AN6T	STMICROELECTRONICS	获取价格	Flash, 512MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND08GW4B2AZB1	STMICROELECTRONICS	获取价格	512MX16 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-
NAND08GW4B2AZB1E	STMICROELECTRONICS	获取价格	Flash, 512MX16, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIAN

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