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NAND08GW3B2CN6 PDF预览

NAND08GW3B2CN6

更新时间: 2024-10-27 13:11:59
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
69页 1707K
描述
Flash, 1GX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

NAND08GW3B2CN6 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:TSOP1,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.21
Is Samacsys:N最长访问时间:35 ns
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:8589934592 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:48
字数:1073741824 words字数代码:1000000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1GX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

NAND08GW3B2CN6 数据手册

 浏览型号NAND08GW3B2CN6的Datasheet PDF文件第2页浏览型号NAND08GW3B2CN6的Datasheet PDF文件第3页浏览型号NAND08GW3B2CN6的Datasheet PDF文件第4页浏览型号NAND08GW3B2CN6的Datasheet PDF文件第5页浏览型号NAND08GW3B2CN6的Datasheet PDF文件第6页浏览型号NAND08GW3B2CN6的Datasheet PDF文件第7页 
NAND04G-B2D, NAND08G-BxC  
4 Gbit, 8 Gbit, 2112 byte/1056 word page  
multiplane architecture, 1.8 V or 3 V, NAND Flash memories  
Preliminary Data  
Features  
High density NAND Flash Memory  
– Up to 8 Gbit memory array  
– Cost-effective solution for mass storage  
applications  
NAND interface  
TSOP48 12 x 20 mm (N)  
– x8 or 16x bus width  
– Multiplexed address/data  
LGA  
Supply voltage: 1.8 V or 3.0 V device  
Page size  
LGA52 12 x 17 mm (ZL)  
– x8 device: (2048 + 64 spare) bytes  
– x16 device: (1024 + 32 spare) words  
r
Data protection:  
Block size  
– Hardware program/erase disabled during  
power transitions  
– x8 device: (128K + 4 K spare) bytes  
– x16 device: (64K + 2 K spare) words  
– Non-volatile protection option  
ONFI 1.0 compliant command set  
Data integrity  
Multiplane architecture  
– Array split into two independent planes  
– Program/erase operations can be  
– 100 000 program/erase cycles (with ECC  
(error correction code))  
performed on both planes at the same time  
Page read/program  
– 10 years data retention  
– Random access: 25 µs (max)  
– Sequential access: 25 ns (min)  
– Page program time: 200 µs (typ)  
®
ECOPACK packages  
Table 1.  
Device Summary  
Part number  
– Multiplane page program time (2 pages):  
200 µs (typ)  
Reference  
NAND04GR3B2D  
NAND04GW3B2D  
NAND04GR4B2D(1)  
NAND04GW4B2D(1)  
NAND08GR3B2C,  
NAND08GW3B2C  
NAND08GR4B2C(1)  
NAND08GW4B2C(1)  
NAND08GR3B4C  
NAND08GW3B4C  
Copy back program with automatic error  
detection code (EDC)  
NAND04G-B2D  
NAND08G-BxC  
Cache read mode  
Fast block erase  
– Block erase time: 1.5 ms (typ)  
– Multiblock erase time (2 blocks):  
1.5 ms (typ)  
Status Register  
Electronic signature  
Chip Enable ‘don’t care’  
Serial number option  
1. x16 organization only available for MCP products.  
December 2007  
Rev 3  
1/69  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1

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