是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TSOP | 包装说明: | TSSOP, TSSOP48,.8,20 |
针数: | 48 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.58 | Is Samacsys: | N |
最长访问时间: | 25000 ns | 命令用户界面: | YES |
数据轮询: | NO | JESD-30 代码: | R-PDSO-G48 |
长度: | 18.4 mm | 内存密度: | 8589934592 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 部门数/规模: | 8K |
端子数量: | 48 | 字数: | 1073741824 words |
字数代码: | 1000000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1GX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP48,.8,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
页面大小: | 2K words | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 编程电压: | 3 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
座面最大高度: | 1.2 mm | 部门规模: | 128K |
最大待机电流: | 0.00005 A | 子类别: | Flash Memories |
最大压摆率: | 0.03 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
切换位: | NO | 类型: | NAND TYPE |
宽度: | 12 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NAND08GW3B2CN1F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B2CN1T | STMICROELECTRONICS |
获取价格 |
1GX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND08GW3B2CN6 | NUMONYX |
获取价格 |
Flash, 1GX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND08GW3B2CN6 | STMICROELECTRONICS |
获取价格 |
Flash, 1GX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND08GW3B2CN6E | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B2CN6F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B2CN6T | STMICROELECTRONICS |
获取价格 |
1GX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND08GW3B2CN6T | NUMONYX |
获取价格 |
Flash, 1GX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND08GW3B2CZL1E | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND08GW3B2CZL1F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash |