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NAND08GW3B2BN6E PDF预览

NAND08GW3B2BN6E

更新时间: 2024-10-27 03:11:43
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
58页 1122K
描述
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

NAND08GW3B2BN6E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:TSOP1,
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.59最长访问时间:25 ns
JESD-30 代码:R-PDSO-G48JESD-609代码:e3
长度:18.4 mm内存密度:8589934592 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:48
字数:1073741824 words字数代码:1000000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1GX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

NAND08GW3B2BN6E 数据手册

 浏览型号NAND08GW3B2BN6E的Datasheet PDF文件第2页浏览型号NAND08GW3B2BN6E的Datasheet PDF文件第3页浏览型号NAND08GW3B2BN6E的Datasheet PDF文件第4页浏览型号NAND08GW3B2BN6E的Datasheet PDF文件第5页浏览型号NAND08GW3B2BN6E的Datasheet PDF文件第6页浏览型号NAND08GW3B2BN6E的Datasheet PDF文件第7页 
NAND04GW3B2B  
NAND08GW3B2A  
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page  
3V, NAND Flash Memories  
Features  
High density NAND Flash Memory  
– up to 8 Gbit memory array  
– Up to 256 Mbit spare area  
– Cost effective solution for mass storage  
applications  
NAND Interface  
– x8 bus width  
– Multiplexed Address/ Data  
TSOP48 12 x 20mm  
Supply voltage  
– 3.0V device: V = 2.7 to 3.6V  
DD  
Page size  
– (2048 + 64 spare) Bytes  
Block size  
Data protection  
– (128K + 4K spare) Bytes  
– Hardware and Software Block Locking  
– Hardware Program/Erase locked during  
Power transitions  
Page Read/Program  
– Random access: 25µs (max)  
– Sequential access: 30ns (min)  
– Page program time: 200µs (typ)  
Data integrity  
– 100,000 Program/Erase cycles (with ECC)  
Copy Back Program mode  
– 10 years Data Retention  
– Fast page copy without external buffering  
®
ECOPACK package  
Cache Program and Cache Read modes  
Development tools  
– Internal Cache Register to improve the  
program and read throughputs  
– Error Correction Code software and  
hardware models  
Fast Block Erase  
– Bad Blocks Management and Wear  
Leveling algorithms  
– File System OS Native reference software  
– Hardware simulation models  
– Block erase time: 2ms (typ)  
Status Register  
Electronic Signature  
Chip Enable ‘don’t care’  
– for simple interface with microcontroller  
Serial Number option  
December 2007  
Rev 5  
1/58  
www.numonyx.com  
1

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