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NAND08GW3B2AN6F PDF预览

NAND08GW3B2AN6F

更新时间: 2024-10-27 03:11:43
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
58页 1122K
描述
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

NAND08GW3B2AN6F 数据手册

 浏览型号NAND08GW3B2AN6F的Datasheet PDF文件第2页浏览型号NAND08GW3B2AN6F的Datasheet PDF文件第3页浏览型号NAND08GW3B2AN6F的Datasheet PDF文件第4页浏览型号NAND08GW3B2AN6F的Datasheet PDF文件第5页浏览型号NAND08GW3B2AN6F的Datasheet PDF文件第6页浏览型号NAND08GW3B2AN6F的Datasheet PDF文件第7页 
NAND04GW3B2B  
NAND08GW3B2A  
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page  
3V, NAND Flash Memories  
Features  
High density NAND Flash Memory  
– up to 8 Gbit memory array  
– Up to 256 Mbit spare area  
– Cost effective solution for mass storage  
applications  
NAND Interface  
– x8 bus width  
– Multiplexed Address/ Data  
TSOP48 12 x 20mm  
Supply voltage  
– 3.0V device: V = 2.7 to 3.6V  
DD  
Page size  
– (2048 + 64 spare) Bytes  
Block size  
Data protection  
– (128K + 4K spare) Bytes  
– Hardware and Software Block Locking  
– Hardware Program/Erase locked during  
Power transitions  
Page Read/Program  
– Random access: 25µs (max)  
– Sequential access: 30ns (min)  
– Page program time: 200µs (typ)  
Data integrity  
– 100,000 Program/Erase cycles (with ECC)  
Copy Back Program mode  
– 10 years Data Retention  
– Fast page copy without external buffering  
®
ECOPACK package  
Cache Program and Cache Read modes  
Development tools  
– Internal Cache Register to improve the  
program and read throughputs  
– Error Correction Code software and  
hardware models  
Fast Block Erase  
– Bad Blocks Management and Wear  
Leveling algorithms  
– File System OS Native reference software  
– Hardware simulation models  
– Block erase time: 2ms (typ)  
Status Register  
Electronic Signature  
Chip Enable ‘don’t care’  
– for simple interface with microcontroller  
Serial Number option  
December 2007  
Rev 5  
1/58  
www.numonyx.com  
1

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