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NAND08GW3B2AN1F PDF预览

NAND08GW3B2AN1F

更新时间: 2024-10-27 03:11:43
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
58页 1122K
描述
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

NAND08GW3B2AN1F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TSOP
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.66
Is Samacsys:N最长访问时间:25000 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:8589934592 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8K端子数量:48
字数:1073741824 words字数代码:1000000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1GX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:2K words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:128K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

NAND08GW3B2AN1F 数据手册

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NAND04GW3B2B  
NAND08GW3B2A  
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page  
3V, NAND Flash Memories  
Features  
High density NAND Flash Memory  
– up to 8 Gbit memory array  
– Up to 256 Mbit spare area  
– Cost effective solution for mass storage  
applications  
NAND Interface  
– x8 bus width  
– Multiplexed Address/ Data  
TSOP48 12 x 20mm  
Supply voltage  
– 3.0V device: V = 2.7 to 3.6V  
DD  
Page size  
– (2048 + 64 spare) Bytes  
Block size  
Data protection  
– (128K + 4K spare) Bytes  
– Hardware and Software Block Locking  
– Hardware Program/Erase locked during  
Power transitions  
Page Read/Program  
– Random access: 25µs (max)  
– Sequential access: 30ns (min)  
– Page program time: 200µs (typ)  
Data integrity  
– 100,000 Program/Erase cycles (with ECC)  
Copy Back Program mode  
– 10 years Data Retention  
– Fast page copy without external buffering  
®
ECOPACK package  
Cache Program and Cache Read modes  
Development tools  
– Internal Cache Register to improve the  
program and read throughputs  
– Error Correction Code software and  
hardware models  
Fast Block Erase  
– Bad Blocks Management and Wear  
Leveling algorithms  
– File System OS Native reference software  
– Hardware simulation models  
– Block erase time: 2ms (typ)  
Status Register  
Electronic Signature  
Chip Enable ‘don’t care’  
– for simple interface with microcontroller  
Serial Number option  
December 2007  
Rev 5  
1/58  
www.numonyx.com  
1

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