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NAND08GAH0AZA5F PDF预览

NAND08GAH0AZA5F

更新时间: 2024-10-26 03:39:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储
页数 文件大小 规格书
116页 2249K
描述
1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface

NAND08GAH0AZA5F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA, BGA169,14X28,20针数:169
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.74
Is Samacsys:N其他特性:ALSO OPERATES WITH 3V SUPPLY
最大时钟频率 (fCLK):52 MHzJESD-30 代码:R-PBGA-B169
长度:16 mm内存密度:1073741824 bit
内存集成电路类型:FLASH CARD内存宽度:8
功能数量:1端子数量:169
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:128MX8
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA169,14X28,20封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/3,3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.4 mm子类别:Other Memory ICs
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL EXTENDED
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:12 mmBase Number Matches:1

NAND08GAH0AZA5F 数据手册

 浏览型号NAND08GAH0AZA5F的Datasheet PDF文件第2页浏览型号NAND08GAH0AZA5F的Datasheet PDF文件第3页浏览型号NAND08GAH0AZA5F的Datasheet PDF文件第4页浏览型号NAND08GAH0AZA5F的Datasheet PDF文件第5页浏览型号NAND08GAH0AZA5F的Datasheet PDF文件第6页浏览型号NAND08GAH0AZA5F的Datasheet PDF文件第7页 
NAND08GAH0A  
NAND16GAH0D  
1 Gbyte, 2 Gbyte, 1.8 V/3 V supply,  
NAND Flash memories with MultiMediaCard™ interface  
Preliminary Data  
Features  
Packaged NAND Flash memory with  
MultiMediaCard interface  
1, 2 Gbytes of formatted data storage  
FBGA  
eMMC/MultiMediaCard system specification,  
compliant with V4.1  
Full backward compatibilty with previous  
MultiMediaCard system specification  
Bus mode  
LFBGA169 12 x 16 x 1.4 mm (ZA)  
– High-speed MultiMediaCard protocol  
– SPI protocol  
– Three different data bus widths:1 bit, 4 bits,  
8 bits  
– Data transfer rate: up to 52 Mbyte/s  
Error free memory access  
Operating voltage range:  
– Internal enhanced data management  
algorithm (wear levelling, bad block  
management, garbage collection)  
– V  
=1.8 V/3 V  
CCQ  
– V = 3 V  
CC  
– Internal error correction code  
Supported clock frequencies: 0 to 52 MHz  
Data integrity  
Multiple Block Read (x 8 at 52 MHz):  
– Data reliability: less than 1 non-recoverable  
up to 3.5 Mbyte/s  
14  
error per 10 bits read  
Multiple Block Write (x 8 at 52 MHz):  
– Endurance: more that 2,000,000  
Program/Erase cycles  
up to 8.5 Mbyte/s  
Power dissipation  
Security  
– Standby current: down to 200 µA  
– Read current: down to 30 mA  
– Write current: down to 30 mA  
– Password protection of data  
– Built-in write protection (permanent or  
temporary)  
December 2007  
Rev 2  
1/116  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1

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