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NAND04GW3C2AN1E PDF预览

NAND04GW3C2AN1E

更新时间: 2024-10-26 03:17:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管ISM频段
页数 文件大小 规格书
51页 504K
描述
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

NAND04GW3C2AN1E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.54最长访问时间:45 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48JESD-609代码:e3/e6
长度:18.4 mm内存密度:4294967296 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:2K
端子数量:48字数:536870912 words
字数代码:512000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:2K words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:256K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40切换位:NO
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

NAND04GW3C2AN1E 数据手册

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NAND04GA3C2A  
NAND04GW3C2A  
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory  
Features  
High density multi-level Cell (MLC) NAND  
Flash memories:  
– Up to 128 Mbit spare area  
– Cost effective solutions for mass storage  
applications  
NAND interface  
TSOP48 12 x 20mm  
– x8 bus width  
– Multiplexed Address/ Data  
Supply voltages  
– V = 2.7 to 3.6V core supply voltage for  
Chip Enable ‘don’t care’  
DD  
Program, Erase and Read operations.  
– for simple interface with microcontroller  
– V  
= 1.7 to 1.95 or 2.7 to 3.6V for I/O  
DDQ  
Data Protection  
buffers.  
– Hardware Program/Erase locked during  
power transitions  
Page size: (2048 + 64 spare) Bytes  
Block size: (256K + 8K spare) Bytes  
Embedded Error Correction Code (ECC)  
– Internal ECC accelerator  
Page Read/Program  
– Random access: 60µs (max)  
– Sequential access: 60ns(min)  
– Page Program Operation time: 800µs (typ)  
– Easy ECC Command Interface  
Data integrity  
– 10,000 Program/Erase cycles (with ECC)  
– 10 years Data Retention  
Cache Read mode  
®
– Internal Cache Register to improve the  
read throughput  
ECOPACK package available  
Development tools  
Fast Block Erase  
– Bad Blocks Management and Wear  
Leveling algorithms  
– Block erase time: 1.5ms (typ)  
Status Register  
– File System OS Native reference software  
– Hardware simulation models  
Electronic Signature  
Serial Number option  
Table 1.  
Product List  
Reference  
Part Number  
Density  
NAND04GA3C2A  
NAND04GW3C2A  
NAND04Gx3C2A  
4 Gbits  
November 2006  
Rev 2  
1/51  
www.st.com  
1

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