型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NAND04GW3B2BN6 | STMICROELECTRONICS |
功能相似 |
512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND04GW3B2BN6F | STMICROELECTRONICS |
功能相似 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NAND04GW3B2BN6F | STMICROELECTRONICS |
获取价格 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories | |
NAND04GW3B2BN6F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories | |
NAND04GW3B2BN6T | NUMONYX |
获取价格 |
Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND04GW3B2BN6T | STMICROELECTRONICS |
获取价格 |
512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND04GW3B2CN1 | STMICROELECTRONICS |
获取价格 |
512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND04GW3B2CN1E | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B2CN1F | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash | |
NAND04GW3B2CN1T | STMICROELECTRONICS |
获取价格 |
Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND04GW3B2CN6 | STMICROELECTRONICS |
获取价格 |
512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
NAND04GW3B2CN6E | NUMONYX |
获取价格 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash |