Datasheet > 存储 > 闪存> NAND04GW3B2BN6E

NAND04GW3B2BN6E

更新时间： 2024-10-26 03:01:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路光电二极管
页数	文件大小	规格书
58页	503K
描述
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

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中文翻译

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数据手册
替代型号

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NAND04GW3B2BN6E 数据手册

NAND04GW3B2B

NAND08GW3B2A

4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page

3V, NAND Flash Memories

PRELIMINARY DATA

Feature summary

■ High density NAND Flash Memory

– up to 8 Gbit memory array

– Up to 256 Mbit spare area

– Cost effective solution for mass storage

applications

■ NAND Interface

– x8 bus width

– Multiplexed Address/ Data

TSOP48 12 x 20mm

■ Supply voltage

– 3.0V device: V_DD= 2.7 to 3.6V

■ Page size

– (2048 + 64 spare) Bytes

■ Block size

■ Data protection

– (128K + 4K spare) Bytes

– Hardware and Software Block Locking

■ Page Read/Program

– Hardware Program/Erase locked during

Power transitions

– Random access: 25µs (max)

– Sequential access: 30ns (min)

– Page program time: 200µs (typ)

■ Data integrity

– 100,000 Program/Erase cycles

■ Copy Back Program mode

– 10 years Data Retention

– Fast page copy without external buffering

■ ECOPACK^®package

■ Development tools

■ Cache Program and Cache Read modes

– Internal Cache Register to improve the

program and read throughputs

– Error Correction Code software and

hardware models

■ Fast Block Erase

– Bad Blocks Management and Wear

Leveling algorithms

– Block erase time: 2ms (typ)

■ Status Register

– File System OS Native reference software

– Hardware simulation models

■ Electronic Signature

■ Chip Enable ‘don’t care’

– for simple interface with microcontroller

■ Serial Number option

May 2006

Rev 2

1/58

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...58

中文翻译

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NAND04GW3B2BN6E 替代型号

型号	品牌	替代类型	描述	数据表
NAND04GW3B2BN6	STMICROELECTRONICS	功能相似	512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GW3B2BN6F	STMICROELECTRONICS	功能相似	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

与NAND04GW3B2BN6E相关器件

型号	品牌	获取价格	描述	数据表
NAND04GW3B2BN6F	STMICROELECTRONICS	获取价格	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND04GW3B2BN6F	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND04GW3B2BN6T	NUMONYX	获取价格	Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GW3B2BN6T	STMICROELECTRONICS	获取价格	512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GW3B2CN1	STMICROELECTRONICS	获取价格	512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GW3B2CN1E	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND04GW3B2CN1F	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND04GW3B2CN1T	STMICROELECTRONICS	获取价格	Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GW3B2CN6	STMICROELECTRONICS	获取价格	512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
NAND04GW3B2CN6E	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash

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