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NAND02GW4B2DN6F PDF预览

NAND02GW4B2DN6F

更新时间: 2024-11-06 04:57:43
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
69页 1812K
描述
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

NAND02GW4B2DN6F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.73
最长访问时间:25000 ns命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:2147483648 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:2K
端子数量:48字数:134217728 words
字数代码:128000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:1K words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NAND TYPE
宽度:12 mmBase Number Matches:1

NAND02GW4B2DN6F 数据手册

 浏览型号NAND02GW4B2DN6F的Datasheet PDF文件第2页浏览型号NAND02GW4B2DN6F的Datasheet PDF文件第3页浏览型号NAND02GW4B2DN6F的Datasheet PDF文件第4页浏览型号NAND02GW4B2DN6F的Datasheet PDF文件第5页浏览型号NAND02GW4B2DN6F的Datasheet PDF文件第6页浏览型号NAND02GW4B2DN6F的Datasheet PDF文件第7页 
NAND02G-B2D  
2-Gbit, 2112-byte/1056-word page  
multiplane architecture, 1.8 V or 3 V, NAND flash memories  
Preliminary Data  
Features  
High density NAND flash memory  
– Up to 2 Gbits of memory array  
– Cost-effective solution for mass storage  
applications  
NAND interface  
– x8 or x16 bus width  
– Multiplexed address/data  
TSOP48 12 x 20 mm (N)  
Supply voltage: 1.8 V or 3.0 V device  
FBGA  
Page size  
– x8 device: (2048 + 64 spare) bytes  
– x16 device: (1024 + 32 spare) words  
VFBGA63 9.5 x 12 mm (ZA)  
Block size  
Status register  
– x8 device: (128 K + 4 K spare) bytes  
– x16 device: (64 K + 2 K spare) words  
Electronic signature  
Chip Enable ‘don’t care’  
Serial number option  
Data protection:  
Multiplane architecture  
– Array split into two independent planes  
– Program/erase operations can be  
performed on both planes at the same time  
– Hardware program/erase disabled during  
power transitions  
Page read/program  
– Non-volatile protection option  
– Random access: 25 µs (max)  
– Sequential access: 25 ns (min)  
– Page program time: 200 µs (typ)  
ONFI 1.0 compliant command set  
Data integrity  
– Multiplane page program time (2 pages):  
200 µs (typ)  
– 100,000 program/erase cycles (with ECC)  
– 10 years data retention  
Copy back program with automatic EDC (error  
®
ECOPACK packages  
detection code)  
Cache read mode  
Table 1.  
Device summary  
Part number  
Fast block erase  
Reference  
– Block erase time: 1.5 ms (typ)  
NAND02GR3B2D  
NAND02GW3B2D  
NAND02GR4B2D(1)  
NAND02GW4B2D(1)  
– Multiblock erase time (2 blocks): 1.5 ms  
(typ)  
NAND02G-B2D  
1. x 16 organization only available for MCP products.  
April 2008  
Rev 3  
1/69  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1

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