Datasheet > NAND02GW4B2BZA1F

NAND02GW4B2BZA1F

更新时间： 2024-11-16 04:57:43

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存存储
页数	文件大小	规格书
60页	1343K
描述
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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中文翻译

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数据手册

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NAND02GW4B2BZA1F 数据手册

NAND01G-B2B

NAND02G-B2C

1-Gbit, 2-Gbit,

2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

Features

■ High density NAND flash memories

– Up to 2 Gbits of memory array

– Cost effective solutions for mass storage

applications

■ NAND interface

– x8 or x16 bus width

TSOP48 12 x 20 mm

– Multiplexed address/ data

– Pinout compatibility for all densities

FBGA

■ Supply voltage: 1.8 V/3.0 V

■ Page size

VFBGA63 9.5 x 12 x 1 mm

VFBGA63 9 x 11 x 1 mm

– x8 device: (2048 + 64 spare) bytes

– x16 device: (1024 + 32 spare) words

■ Serial number option

■ Block size

■ Data protection

– x8 device: (128 K + 4 K spare) bytes

– x16 device: (64 K + 2 K spare) words

– Hardware block locking

– Hardware program/erase locked during

power transitions

■ Page read/program

– Random access: 25 µs (max)

– Sequential access: 30 ns (min)

– Page program time: 200 µs (typ)

■ Data integrity

– 100 000 program/erase cycles per block

(with ECC)

■ Copy back program mode

■ Cache program and cache read modes

■ Fast block erase: 2 ms (typ)

■ Status register

– 10 years data retention

■ ECOPACK packages

■ Development tools

– Error correction code models

■ Electronic signature

– Bad blocks management and wear leveling

algorithms

■ Chip enable ‘don’t care’

– Hardware simulation models

Table 1.

Device summary

Reference

Part number

NAND01GR3B2B, NAND01GW3B2B

NAND01GR4B2B, NAND01GW4B2B⁽¹⁾

NAND02GR3B2C, NAND02GW3B2C

NAND02GR4B2C, NAND02GW4B2C⁽¹⁾

NAND01G-B2B

NAND02G-B2C

1. x16 organization only available for MCP products.

April 2008

Rev 5

1/60

www.numonyx.com

12 3 4 5 6 7...60

中文翻译

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NAND02GW4B2BZA6	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZA6E	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZA6E	NUMONYX	获取价格	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW4B2BZA6F	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZA6F	NUMONYX	获取价格	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW4B2BZB1	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND02GW4B2BZB1E	STMICROELECTRONICS	获取价格	128MX16 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD
NAND02GW4B2BZB1F	STMICROELECTRONICS	获取价格	暂无描述
NAND02GW4B2BZB1T	STMICROELECTRONICS	获取价格	128MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
NAND02GW4B2BZB6	STMICROELECTRONICS	获取价格	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory