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NAND02GW3B2CN1E PDF预览

NAND02GW3B2CN1E

更新时间: 2024-11-15 04:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管
页数 文件大小 规格书
62页 713K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND02GW3B2CN1E 数据手册

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NAND01G-B2B  
NAND02G-B2C  
1 Gbit, 2 Gbit,  
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory  
Features  
High Density NAND Flash memories  
Up to 2 Gbit memory array  
Cost effective solutions for mass  
storage applications  
NAND interface  
TSOP48 12 x 20mm  
x8 or x16 bus width  
Multiplexed Address/ Data  
Pinout compatibility for all densities  
FBGA  
Supply voltage: 1.8V/3.0V  
Page size  
VFBGA63 9.5 x 12 x 1mm  
VFBGA63 9 x 11 x 1mm  
x8 device: (2048 + 64 spare) Bytes  
x16 device: (1024 + 32 spare) Words  
Serial Number option  
Data protection  
Block size  
x8 device: (128K + 4K spare) Bytes  
x16 device: (64K + 2K spare) Words  
Hardware Block Locking  
Hardware Program/Erase locked during  
Power transitions  
Page Read/Program  
Random access: 25µs (max)  
Data integrity  
Sequential access: 30ns (min)  
Page program time: 200µs (typ)  
100,000 Program/Erase cycles  
10 years Data Retention  
Copy Back Program mode  
Cache Program and Cache Read modes  
Fast Block Erase: 2ms (typ)  
Status Register  
®
ECOPACK packages  
Development tools  
Error Correction Code models  
Bad Blocks Management and Wear  
Leveling algorithms  
Electronic Signature  
Chip Enable ‘don’t care’  
Hardware simulation models  
Table 1.  
Product List  
Reference  
Part Number  
NAND01GR3B2B, NAND01GW3B2B  
NAND01G-B2B  
NAND02G-B2C  
NAND01GR4B2B, NAND01GW4B2B(1)  
NAND02GR3B2C, NAND02GW3B2C  
NAND02GR4B2C, NAND02GW4B2C(1)  
1. x16 organization only available for MCP Products.  
November 2006  
Rev 3  
1/62  
www.st.com  
1

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NAND02GW3B2CN6E NUMONYX

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1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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