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NAND02GW3B2BZA1F PDF预览

NAND02GW3B2BZA1F

更新时间: 2024-11-15 04:57:43
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路
页数 文件大小 规格书
60页 1343K
描述
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

NAND02GW3B2BZA1F 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:63
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.37
Is Samacsys:N最长访问时间:25000 ns
JESD-30 代码:R-PBGA-B63长度:12 mm
内存密度:2147483648 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:63字数:268435456 words
字数代码:256000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256MX8封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.05 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
类型:NAND TYPE宽度:9.5 mm
Base Number Matches:1

NAND02GW3B2BZA1F 数据手册

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NAND01G-B2B  
NAND02G-B2C  
1-Gbit, 2-Gbit,  
2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory  
Features  
High density NAND flash memories  
– Up to 2 Gbits of memory array  
– Cost effective solutions for mass storage  
applications  
NAND interface  
– x8 or x16 bus width  
TSOP48 12 x 20 mm  
– Multiplexed address/ data  
– Pinout compatibility for all densities  
FBGA  
Supply voltage: 1.8 V/3.0 V  
Page size  
VFBGA63 9.5 x 12 x 1 mm  
VFBGA63 9 x 11 x 1 mm  
– x8 device: (2048 + 64 spare) bytes  
– x16 device: (1024 + 32 spare) words  
Serial number option  
Block size  
Data protection  
– x8 device: (128 K + 4 K spare) bytes  
– x16 device: (64 K + 2 K spare) words  
– Hardware block locking  
– Hardware program/erase locked during  
power transitions  
Page read/program  
– Random access: 25 µs (max)  
– Sequential access: 30 ns (min)  
– Page program time: 200 µs (typ)  
Data integrity  
– 100 000 program/erase cycles per block  
(with ECC)  
Copy back program mode  
Cache program and cache read modes  
Fast block erase: 2 ms (typ)  
Status register  
– 10 years data retention  
®
ECOPACK packages  
Development tools  
– Error correction code models  
Electronic signature  
– Bad blocks management and wear leveling  
algorithms  
Chip enable ‘don’t care’  
– Hardware simulation models  
Table 1.  
Device summary  
Reference  
Part number  
NAND01GR3B2B, NAND01GW3B2B  
NAND01GR4B2B, NAND01GW4B2B(1)  
NAND02GR3B2C, NAND02GW3B2C  
NAND02GR4B2C, NAND02GW4B2C(1)  
NAND01G-B2B  
NAND02G-B2C  
1. x16 organization only available for MCP products.  
April 2008  
Rev 5  
1/60  
www.numonyx.com  
1

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