是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | BGA | 包装说明: | 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63 |
针数: | 63 | Reach Compliance Code: | not_compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.24 | Is Samacsys: | N |
最长访问时间: | 35 ns | 命令用户界面: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B63 |
JESD-609代码: | e0 | 长度: | 12 mm |
内存密度: | 2147483648 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
部门数/规模: | 2K | 端子数量: | 63 |
字数: | 134217728 words | 字数代码: | 128000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装等效代码: | BGA63,10X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 页面大小: | 1K words |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8 V | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
座面最大高度: | 1.2 mm | 部门规模: | 64K |
最大待机电流: | 0.00005 A | 子类别: | Flash Memories |
最大压摆率: | 0.015 mA | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN LEAD |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
切换位: | NO | 类型: | NAND TYPE |
宽度: | 9.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NAND02GR4B2AZB1F | STMICROELECTRONICS |
获取价格 |
128MX16 FLASH 1.8V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEA | |
NAND02GR4B2AZB1T | STMICROELECTRONICS |
获取价格 |
128MX16 FLASH 1.8V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA- | |
NAND02GR4B2AZB6 | STMICROELECTRONICS |
获取价格 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | |
NAND02GR4B2AZB6E | STMICROELECTRONICS |
获取价格 |
暂无描述 | |
NAND02GR4B2AZB6F | STMICROELECTRONICS |
获取价格 |
128MX16 FLASH 1.8V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEA | |
NAND02GR4B2AZB6T | STMICROELECTRONICS |
获取价格 |
128MX16 FLASH 1.8V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA- | |
NAND02GR4B2BN1 | STMICROELECTRONICS |
获取价格 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | |
NAND02GR4B2BN1E | STMICROELECTRONICS |
获取价格 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | |
NAND02GR4B2BN1E | NUMONYX |
获取价格 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory | |
NAND02GR4B2BN1F | NUMONYX |
获取价格 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |